Near-ideal behavior in Schottky contacts to Si-doped AlN was observed as evidenced by a low ideality factor of 1.5 at room temperature. A temperature-independent Schottky barrier height of 1.9 eV was extracted from temperature-dependent I–V measurements. An activation energy of ∼300 meV was observed in the series resistance, which corresponded to the ionization energy of the deep Si donor state. Both Ohmic and Schottky contacts were stable up to 650 °C, with around four orders of magnitude rectification at this elevated temperature. These results demonstrate the potential of AlN as a platform for power devices capable of operating in extreme environments.
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Klump, A. ; Hoffmann, M. P. ; Kaess, F. ; Tweedie, J. ; Reddy, P. ; Kirste, R. ; Sitar, Z. ; Collazo, R. ( , Journal of Applied Physics)
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Callsen, G. ; Wagner, M. R. ; Kure, T. ; Reparaz, J. S. ; Bügler, M. ; Brunnmeier, J. ; Nenstiel, C. ; Hoffmann, A. ; Hoffmann, M. ; Tweedie, J. ; et al ( , Physical Review B)
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Reddy, P. ; Hoffmann, M. P. ; Kaess, F. ; Bryan, Z. ; Bryan, I. ; Bobea, M. ; Klump, A. ; Tweedie, J. ; Kirste, R. ; Mita, S. ; et al ( , Journal of Applied Physics)